This is a Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM datasheet, which provides detailed information about the product's features and characteristics.
The K5T6432YT(B)M is a multi‑chip package memory that combines a 64 Mbit four‑bank NOR flash and a 32 Mbit UtRAM, both organized as 16‑bit words. It operates from a single 2.7 V to 3.3 V supply and is offered in an 81‑ball TBGA package with a 0.8 mm pitch.
The document provides detailed electrical characteristics, memory organization, timing diagrams, package dimensions, and block address tables for both flash and UtRAM sections, targeting mobile communication system applications where low standby current and deep power‑down modes are required.
| Operating voltage | 2.7 V to 3.3 V |
|---|---|
| Flash organization | 4,194,304 × 16 bit |
| UtRAM organization | 2,097,152 × 16 bit |
| Flash access time | 85 ns |
| UtRAM access time | 100 ns |
| Flash read current | 20 mA @5 MHz |
| Sequential page read current | 5 mA @5 MHz |
| Program/Erase current | 35 mA (max) |
| Standby / deep‑power‑down current | 0.1 µA |
| UtRAM operating current | 18 mA |
| UtRAM standby current | 120 µA |
| Deep power‑down current | 5 pA |
| Flash bank size | 4 Mb / 4 Mb / 28 Mb / 28 Mb |
| Flash endurance | 100 000 program/erase cycles |
| Ambient temperature range | -25 °C to 85 °C |
| Package type | 81‑ball TBGA, 0.8 mm pitch |
| Package dimensions | 10.8 mm × 10.4 mm (bottom view) |
The device operates from 2.7 V to 3.3 V.
It is supplied in an 81‑ball TBGA package with a 0.8 mm pitch.
The flash memory access time is 85 ns.
The flash can endure 100 000 program/erase cycles.