Key facts
- Brand
- Samsung
- Model
- K5P2880YCM
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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samsung K5P2880YCM - T085 handbook(1)
The K5P2880YCM is a multi‑chip package memory that combines a 128‑Mbit NAND flash with an 8‑Mbit full CMOS SRAM in a single 3.0 V powered device. It is intended for data memory in mobile communication systems, offering low power consumption and a compact 69‑ball TBGA package.
The datasheet provides electrical characteristics, timing diagrams, command sets, and package dimensions. Key specifications include a 2.7 V‑3.3 V supply range, 10 µs maximum random flash access, 50 ns minimum serial read, and a 100 k program/erase cycle endurance. Detailed pin descriptions and ball configurations are also included.
Samsung K5P2880YCM specifications
| Supply voltage | 2.7 V to 3.3 V |
|---|---|
| Flash random access time | 10 µs (max) |
| Flash serial read time | 50 ns (min) |
| SRAM access time | 85 ns |
| Flash read current | 10 mA @ 20 MHz |
| Flash program/erase current | 10 mA |
| Flash standby current | 10 pA |
| SRAM operating current | 20 mA |
| SRAM standby current | 0.5 pA |
| Flash endurance | 100,000 program/erase cycles (minimum) |
| Flash data retention | 10 years |
| SRAM data retention voltage | 1.5 V (min) |
| Operating temperature | -25 °C to 85 °C |
| Package | 69‑ball TBGA, 8 × 13 mm, 0.8 mm pitch |
All Samsung K5P2880YCM documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage range does the K5P2880YCM require?
It operates from 2.7 V up to 3.3 V.
How many program/erase cycles can the flash memory endure?
The flash can endure at least 100,000 program/erase cycles.
What supply voltage range does the K5P2880YCM - T085 require?
It operates from 2.7 V to 3.3 V.
How many program/erase cycles can the flash memory endure?
The flash can endure at least 100 000 program/erase cycles.