Key facts
- Brand
- Samsung
- Model
- K4S56163PF
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
Start here
Samsung K4S56163PF R(B)G/F Mobile SDRAM Datasheet
The K4S56163PF R(B)G/F is a 4M × 16‑bit mobile SDRAM offered in a 54‑ball FBGA package. It supports 1.8 V LVCMOS operation, multiple CAS latencies (1‑3), burst lengths up to full page, and features such as Partial Array Self‑Refresh (PASR) and internal Temperature‑Compensated Self‑Refresh (TCSR). The device is available in low‑power commercial (‑25 °C ~ 70 °C) and extended (‑25 °C ~ 85 °C) temperature grades.
The datasheet provides absolute maximum ratings, recommended DC and AC operating conditions, timing parameters, and power‑up and burst sequences. It also lists ordering information, package pinout, and detailed electrical characteristics for designers integrating the part into high‑performance memory systems.
Samsung K4S56163PF specifications
| Maximum operating frequency (CL3) | 133 MHz |
|---|---|
| Maximum operating frequency (CL2) | 883 MHz |
| Supply voltage (Vop) typical | 1.8 V |
| Power dissipation (Pp) | 1.0 W |
| Refresh period | 64 ms |
| CAS latency options | 1, 2, 3 |
All Samsung K4S56163PF documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the recommended supply voltage for the K4S56163PF?
The typical supply voltage (Vop) is 1.8 V, with a range from 1.7 V to 1.95 V.
What is the maximum refresh period allowed?
The device uses a 64 ms refresh period.
What is the operating voltage range for the K4S56163PF?
The device operates with Vop from 1.7 V to 1.95 V, typical 1.8 V.
Which temperature ranges does the K4S56163PF support?
It supports commercial temperature (‑25 °C ~ 70 °C) and extended temperature (‑25 °C ~ 85 °C).