K4S56163PF is a low-power, high-performance synchronous dynamic random access memory (SDRAM) produced by Samsung. It uses 4 x 4,196,304 bytes x 16 bit high-performance CMOS technology and can work in the commercial temperature range of -25°C~70°C and the extended temperature range of -25°C~85°C.
The K4S56163PF is a 4M × 16‑bit Mobile SDRAM packaged in a 54‑ball FBGA. It operates from a 1.8 V supply and supports both commercial (‑25 °C ~ 70 °C) and extended (‑25 °C ~ 85 °C) temperature ranges. The device offers configurable burst lengths, CAS latencies, and driver strengths, making it suitable for high‑bandwidth memory systems.
The datasheet details the pin configuration, absolute maximum ratings, DC and AC operating conditions, power‑up sequence, and self‑refresh options (PASR and TCSR). Electrical parameters such as refresh period (64 ms), power dissipation (1 W), and capacitance values are also provided.
| Capacity | 4M × 16 bits |
|---|---|
| Package | 54‑ball FBGA (54FBGA) |
| Supply Voltage (Vop) | 1.7 V ~ 1.95 V |
| Operating Frequency (max) | 133 MHz (CL3) / 883 MHz (CL2) |
| Temperature Range | Commercial: ‑25 °C ~ 70 °C; Extended: ‑25 °C ~ 85 °C |
| Refresh Period | 64 ms (8K cycles) |
| Maximum Power Dissipation | 1.0 W |
The device operates with Vop from 1.7 V to 1.95 V, typical 1.8 V.
It supports commercial temperature (‑25 °C ~ 70 °C) and extended temperature (‑25 °C ~ 85 °C).
The maximum refresh period is 64 ms, corresponding to an 8K cycle refresh.
The chip is packaged in a 54‑ball FBGA (54FBGA).