Key facts
- Brand
- Samsung
- Model
- K4S51163PF-Y
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S51163PF-Y(P)F Mobile SDRAM Datasheet
The Samsung K4S51163PF-Y(P)F Mobile‑SDRAM is an 8 M × 16‑bit, four‑bank memory device designed for high‑performance mobile applications. It operates from a 1.8 V supply, supports multiple burst lengths and CAS latencies, and includes special functions such as Partial Array Self‑Refresh (PASR) and Temperature‑Compensated Self‑Refresh (TCSR).
The document provides functional block diagrams, package dimensions, absolute maximum ratings, DC and AC electrical characteristics, power‑up sequencing, and burst operation examples. It also lists ordering information, including the 54‑ball FBGA package and supported operating frequencies up to 133 MHz.
Samsung K4S51163PF-Y specifications
| Supply Voltage | 1.8 V |
|---|---|
| Maximum Operating Frequency | 133 MHz (CL=3) |
| Package Type | 54‑ball FBGA |
| Commercial Temperature Range | -25 °C to 70 °C |
| Refresh Period | 64 ms (8K cycles) |
All Samsung K4S51163PF-Y documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the supply voltage for the K4S51163PF-Y(P)F Mobile SDRAM?
The device operates from a 1.8 V power supply.
What is the maximum operating frequency of this SDRAM?
It can run up to 133 MHz when configured with CAS latency 3.
What is the recommended power supply voltage for the K4S51163PF-Y(P)F?
The device is designed to operate from a 1.8 V power supply.
What temperature range is supported for commercial operation?
It supports commercial temperature operation from –25 °C to 70 °C.