The K4S51163PF is a high-performance dynamic random-access memory device manufactured by Samsung. It features a synchronous design that allows precise cycle control with the use of the system clock, and I/O transactions are possible on every clock cycle. The device's range of operating frequencies, programmable burst lengths, and programmable latencies make it suitable for a variety of high-bandwidth and high-performance memory system applications.
This document describes the Samsung K4S51163PF-Y(P)F Mobile‑SDRAM, an 8 M × 16‑bit, four‑bank memory device that operates from a 1.8 V supply. It includes functional block diagrams, package dimensions, pin assignments, absolute maximum ratings, and detailed DC and AC electrical characteristics.
The manual also covers operating procedures such as the power‑up sequence, burst modes, partial array self‑refresh options, and timing parameters for various CAS latencies. Specification tables list supported frequencies, package types, and temperature ranges for commercial use.
| Power supply voltage | 1.8 V |
|---|---|
| Number of banks | Four |
| Maximum operating frequency (K4S51163PF-Y(P)F75) | 133 MHz (CL = 3) |
| Package type | 54‑ball FBGA |
| Commercial temperature range | -25 °C to 70 °C |
The device is designed to operate from a 1.8 V power supply.
It supports commercial temperature operation from –25 °C to 70 °C.
The SDRAM contains four banks.