K4S51163PF-Y(P)F is a synchronous high data rate dynamic memory produced by Samsung. The organization is 4 x 8,388,608 words by 16 bits, with programmable burst lengths and programmable latencies, suitable for various high bandwidth and high performance memory system applications.
The Samsung K4S51163PF-Y(P)F Mobile‑SDRAM is an 8 M × 16‑bit, four‑bank memory device designed for high‑performance mobile applications. It operates from a 1.8 V supply, supports multiple burst lengths and CAS latencies, and includes special functions such as Partial Array Self‑Refresh (PASR) and Temperature‑Compensated Self‑Refresh (TCSR).
The document provides functional block diagrams, package dimensions, absolute maximum ratings, DC and AC electrical characteristics, power‑up sequencing, and burst operation examples. It also lists ordering information, including the 54‑ball FBGA package and supported operating frequencies up to 133 MHz.
| Supply Voltage | 1.8 V |
|---|---|
| Maximum Operating Frequency | 133 MHz (CL=3) |
| Package Type | 54‑ball FBGA |
| Commercial Temperature Range | -25 °C to 70 °C |
| Refresh Period | 64 ms (8K cycles) |
The device operates from a 1.8 V power supply.
It can run up to 133 MHz when configured with CAS latency 3.
It is supplied in a 54‑ball FBGA package.
The device is rated for -25 °C to 70 °C in commercial temperature operation.