The K4S511633F is a high-performance CMOS dynamic random access memory produced by Samsung. It uses a synchronous design that allows precise timing control and supports a variety of high-bandwidth, high-performance memory system applications. This device has multiple operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for use in a variety of applications.
The Samsung K4S511633F-Y(P)C/L/F Mobile SDRAM is an 8M × 16‑bit, four‑bank memory device supporting 3.0 V and 3.3 V power supplies. It offers programmable burst lengths, CAS latencies, and special functions such as Partial Array Self‑Refresh (PASR) and Temperature‑Compensated Self‑Refresh (TCSR).
The document provides functional block diagrams, package dimensions, absolute maximum ratings, DC and AC operating conditions, timing parameters, and power‑up sequences, enabling designers to integrate the part into high‑performance mobile applications.
| Capacity | 8M × 16 bit × 4 Banks |
|---|---|
| Supply Voltage | 3.0 V & 3.3 V |
| Operating Temperature | -25 °C ~ 70 °C (Commercial) |
| Maximum Frequency | 133 MHz (CL3), 111 MHz (CL2) |
| Package | 54‑ball FBGA |
| Refresh Period | 64 ms (8K cycles) |
| Supported Burst Lengths | 1, 2, 4, 8, Full page |
| Supported CAS Latencies | 1, 2, 3 |
The device operates from 3.0 V to 3.3 V, with a recommended supply voltage of 2.7 V to 3.6 V.
The SDRAM uses a 64 ms refresh period (8K cycles).
Burst lengths of 1, 2, 4, 8 and full page are supported.
The device is rated for commercial temperature operation from –25 °C to 70 °C.