K4S511633F-Y(P)C/L/F is a 536,870,912 bit synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. It has range of operating frequencies, programmable burst length and programmable latencies, which make it suitable for a variety of high bandwidth, high performance memory system applications.
The Samsung K4S511633F-Y(P)C/L/F is an 8M × 16‑bit mobile SDRAM organized in four banks, supporting 3.0 V and 3.3 V power supplies, LVCMOS‑compatible multiplexed address, and a range of CAS latencies and burst lengths. It includes features such as Partial Array Self‑Refresh (PASR) and internal Temperature‑Compensated Self‑Refresh (TCSR).
The document provides full electrical characteristics, package dimensions, pin configuration, absolute maximum ratings, and recommended operating conditions, as well as power‑up sequencing and burst operation examples for designers integrating the device into high‑performance memory systems.
| Memory capacity | 8M × 16 bit × 4 banks |
|---|---|
| Supply voltage (Vbb) | 2.7 V – 3.6 V |
| Maximum operating frequency | 133 MHz (CL3) / 111 MHz (CL2) |
| Package type | 54‑ball FBGA |
| Operating temperature range | -25 °C – 70 °C |
| Refresh period | 64 ms (8K cycles) |
| Storage temperature range | -55 °C – +150 °C |
| Power dissipation (Pp) | 1.0 W |
The device operates with a supply voltage (Vbb) between 2.7 V and 3.6 V.
It is rated for commercial temperature operation from –25 °C to 70 °C.
The SDRAM is supplied in a 54‑ball FBGA package.
The refresh period is 64 ms, corresponding to an 8K cycle refresh.