The K4S511633C-YL/N/P is a 3.0V power supply 32Mx16 54CSP 1/CS (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Mobile SDRAM fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control, with four banks operation, MRS cycle with address key programs, burst length, burst type and all inputs sampled at the positive going edge of the system clock.
The K4S511633C-YL/N/P is an 8M × 16‑bit mobile SDRAM organized in four banks. It operates with a 3.0 V (or 3.3 V) supply and supports multiple CAS latencies, burst lengths, and frequencies up to 100 MHz.
The document provides absolute maximum ratings, recommended DC and AC operating conditions, package dimensions, pin functions, timing parameters, and a simplified truth table for command encoding.
| Supply voltage (VDD) | 2.7 V – 3.6 V |
|---|---|
| Maximum operating frequency | 100 MHz (CL=2) |
| Memory organization | 8 M × 16 bits (four banks) |
| Package type | 54‑ball CSP (6 × 9) |
| CAS latency options | 1, 2, 3 |
The recommended supply voltage is between 2.7 V and 3.6 V.
The device can operate up to 100 MHz when programmed with CL=2.
It has four banks of memory.
It is supplied in a 54‑ball CSP (6 × 9) package.