K4S511633C-YL/N/P is a 32Mx16 54CSP 1/CS (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Mobile SDRAM, powered by 3.0V, LVCMOS compatible with multiplexed address, supports four-bank operation, MRS cycle with address key programming.
The K4S511633C-YL/N/P is a mobile CMOS SDRAM device from Samsung, organized as 8M × 16 bits with four banks. It is designed for high‑performance memory systems in mobile and embedded applications.
The document details electrical specifications, package dimensions, timing parameters, and command tables, enabling designers to integrate the part into their circuits with proper voltage, frequency, and timing settings.
| Memory organization | 8M × 16 bit × 4 banks |
|---|---|
| Supply voltage (VDD/VDDQ) | 2.7 V – 3.6 V |
| Maximum operating frequency | 100 MHz (CL=2) |
| Power dissipation (absolute max) | 1 W |
| Package type | 54‑ball CSP |
| CAS latency options | 1, 2, 3 |
The device operates with a supply voltage between 2.7 V and 3.6 V.
It can run up to 100 MHz when configured with CL = 2.
The part is supplied in a 54‑ball CSP package.
The SDRAM supports CAS latency values of 1, 2, and 3.