This document describes the features and characteristics of K4S511632M CMOS SDRAM, including its capacity, organization, operating frequency range, timing control, and power supply.
The K4S511632M is a 912 Mbit CMOS SDRAM organized as 8 M × 16 bit × 4 banks. It operates with a JEDEC‑standard 3.3 V supply and supports LVTTL‑compatible multiplexed addresses. The device offers auto and self‑refresh with a 64 ms refresh period and can run up to 133 MHz (CL = 3) in the TC/TL75 package.
The datasheet details absolute maximum ratings, recommended DC and AC operating conditions, pin functions, and timing parameters. It also includes a simplified truth table for command encoding and electrical characteristics such as supply voltage range, temperature limits, and power dissipation.
| Capacity | 912 Mbit |
|---|---|
| Organization | 8 M × 16 bit × 4 banks |
| Supply voltage (typical) | 3.3 V |
| Supply voltage range | 3.0 V – 3.6 V |
| Maximum operating frequency | 133 MHz (CL = 3) |
| Refresh period | 64 ms (8K cycles) |
| Storage temperature range | -55 °C – +150 °C |
| Power dissipation | 1 W |
The device operates with a supply voltage between 3.0 V and 3.6 V.
The K4S511632M‑TC/TL75 version can run up to 133 MHz with CAS latency 3.
It uses a 64 ms refresh period, corresponding to an 8 K cycle refresh interval.
The SDRAM can be stored from –55 °C up to +150 °C.