The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technol- ogy.
The K4S511632M is a 912 Mbit CMOS SDRAM organized as 8 M × 16 bit × 4 banks. It operates with a 3.3 V LVTTL interface and supports synchronous operation up to 133 MHz. The document lists features such as selectable CAS latency, burst length options, and auto/self‑refresh capabilities.
Detailed sections cover pin configuration for the 54‑pin TSOP package, absolute maximum ratings, DC and AC operating conditions, timing parameters, and a simplified truth table for command encoding. Revision history and ordering information for different package variants are also included.
| Capacity | 912 Mbit |
|---|---|
| Organization | 8 M × 16 bit × 4 banks |
| Supply Voltage | 3.0 V – 3.6 V |
| Maximum Frequency | 133 MHz (TC/TL75 version) |
| CAS Latency | 2 or 3 |
| Burst Length Options | 1, 2, 4, 8, Full page |
| Package | 54‑pin TSOP (II) |
The device operates with a supply voltage between 3.0 V and 3.6 V.
The TC/TL75 version can run up to 133 MHz.
It contains four banks of memory.
CLK is the system clock and is sampled on the positive‑going edge.