K4S280832A is a 128Mbit Synchronous High Data Rate Dynamic Random Access Memory (SDRAM) organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications.
The Samsung K4S280832A is a 128‑Mbit CMOS SDRAM organized as 4M × 8‑bit × 4 banks. It operates with a 3.3 V LVTTL interface and supports CAS latencies of 2 and 3, burst lengths from 1 to full page, and programmable burst types. The device is offered in a 54‑pin TSOP package.
The datasheet lists absolute maximum ratings, recommended DC operating conditions, AC characteristics, IBIS specifications, and a simplified truth table for command timing. Detailed pin‑out diagrams and electrical parameters such as supply voltage range, power dissipation, and temperature limits are included to aid designers in integrating the part into high‑performance memory systems.
| Memory capacity | 128 Mbit |
|---|---|
| Organization | 4M × 8 bit × 4 banks |
| Supply voltage (VDD) | 3.0 V – 3.6 V (typical 3.3 V) |
| Maximum operating frequency | 133 MHz (CL = 3) |
| CAS latency | 2 or 3 |
| Package | 54‑pin TSOP |
| Power dissipation | 1 W |
| Storage temperature range | -55 °C – +150 °C |
| Refresh period | 64 ms (4K cycles) |
The device operates with a supply voltage between 3.0 V and 3.6 V, with a typical value of 3.3 V.
The K4S280832A supports CAS latency values of 2 and 3.
It is packaged in a 54‑pin TSOP (Thin Small‑Outline Package).
The maximum clock frequency is 133 MHz when CAS latency is set to 3.