This document introduces the K4S280432C CMOS SDRAM product from Samsung Electronics. The product is a synchronous dynamic RAM with a high data rate, organized as 4 x 8,388,608 words by 4 bits, fabricated with Samsung's high-performance CMOS technology. It operates on a 3.3V power supply and is LVTTL compatible with multiplexed address. It supports four banks operation and features programmable burst length, CAS latency, and burst type.
The K4S280432C is a 128 Mbit synchronous CMOS SDRAM organized as 8M × 4 bits × 4 banks, compatible with LVTTL and a 3.3 V JEDEC standard power supply. It supports burst lengths of 1, 2, 4, and 8, with selectable CAS latencies of 2 or 3, and offers auto‑refresh and self‑refresh functions.
Key electrical specifications include a supply voltage range of 3.0 V to 3.6 V, maximum operating frequencies up to 133 MHz (TC/L75 version), a 64 ms refresh period, and an operating temperature range from –55 °C to +150 °C. The device is supplied in a 54‑pin TSOP package with detailed pin‑out and timing diagrams provided.
| Capacity | 128 Mbit |
|---|---|
| Organization | 8M × 4 bits × 4 banks |
| Supply voltage (VDD) | 3.0 V – 3.6 V |
| Maximum operating frequency | 133 MHz (TC/L75 version) |
| CAS latency | 2 or 3 |
| Burst length | 1, 2, 4, 8 |
| Refresh period | 64 ms |
| Operating temperature range | -55 °C to +150 °C |
The device operates with a supply voltage between 3.0 V and 3.6 V.
The TC/L75 version can run up to 133 MHz with CAS latency 3.
It can be stored from –55 °C up to +150 °C.
Burst lengths of 1, 2, 4, and 8 are supported.