The FQT4N20 is a 200V N-Channel enhancement mode power field effect transistor produced by Fairchild using their proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control and other applications.
The FQT4N20 is a 200 V N‑Channel enhancement‑mode power MOSFET designed for high‑efficiency switching applications such as DC‑DC converters, UPS, motor control and other power‑switching circuits. It features low gate charge, low on‑state resistance and robust avalanche capability.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, test circuit diagrams, and package dimensions (SOT‑223). Key parameters include a 200 V drain‑source rating, 0.85 A continuous drain current at 25 °C, and a thermal resistance of 57 °C/W.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 0.85 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 2.2 W |
| Thermal Resistance, Junction‑to‑Ambient | 57 °C/W |
| Reverse Transfer Capacitance (Crss) | 5‑7 pF |
| Package Type | SOT‑223 |
The FQT4N20 is rated for a maximum drain‑source voltage of 200 V.
It operates from –55 °C to +150 °C.
The device is supplied in an SOT‑223 surface‑mount package.