FQT4N20 is a 200V N-channel MOSFET with low on-resistance, low gate charge, low Crss, and fast switching performance. It is well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control and other applications.
The FQT4N20 is an N‑Channel enhancement mode power MOSFET designed for high‑efficiency switching applications such as DC‑DC converters, SMPS, UPS, and motor control. It features low on‑resistance, low gate charge (typical 5 nC) and fast switching performance.
Key specifications include a 200 V drain‑source rating, 0.85 A continuous drain current at 25 °C, 3.4 A pulsed current, and a thermal resistance of 57 °C/W. The device is supplied in an SOT‑223 package and includes detailed test circuit diagrams for gate charge and diode recovery characteristics.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 0.85 A |
| Pulsed Drain Current (I_D) (Note 1) | 3.4 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25 °C | 2.2 W |
| Thermal Resistance, Junction‑to‑Ambient | 57 °C/W |
| Input Capacitance (C_iss) | 170‑220 pF |
| Output Capacitance (C_oss) | 35‑45 pF |
| Reverse Transfer Capacitance (C_rss) | 5‑7 pF |
| Total Gate Charge (Q_g) | 5.0‑6.5 nC |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 0.85 A continuously at a junction temperature of 25 °C.
The MOSFET is supplied in an SOT‑223 surface‑mount package.