Key facts
- Brand
- STMicroelectronics
- Model
- STP3NK80Z
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-08-07
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ST STP3NK80Z/STF3NK80Z/STD3NK80Z/STD3NK80Z-1 handbook
This document describes the features and characteristics of STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET. The product has extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
Read onlineSTMicroelectronics STP3NK80Z specifications
| Drain‑source voltage (VDS) | 800 V |
|---|---|
| Pulsed drain current (ID,pulse) | 10 A |
| Gate‑source voltage (VGS) | +30 V |
| Avalanche energy (Eav) | 170 mJ |
Source: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet
All STMicroelectronics STP3NK80Z documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Questions answered in these manuals
What is the maximum drain‑source voltage for the STP3NK80Z MOSFET?
The device is rated for a maximum drain‑source voltage of 800 V.
From: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet
What is the avalanche energy rating?
The MOSFET can absorb a single pulse avalanche energy of 170 mJ.
From: STMicroelectronics STP3NK80Z / STF3NK80Z / STD3NK80Z / STD3NK80Z-1 Datasheet