Key facts
- Brand
- STMicroelectronics
- Model
- STP6NB25
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-01
Start here
User ManualST STP6NB25/STP6NB25FP Manual(2)
STMicroelectronics STP6NB25 specifications
| Drain‑source Voltage (Vds) | 250 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 6 A (STP6NB25) / 3.7 A (STP6NB25FP) |
| Total Dissipation (Pd) @ 25 °C | 75 W (STP6NB25) / 30 W (STP6NB25FP) |
| Typical On‑Resistance (Rds(on)) | 0.9 mΩ |
| Avalanche Current | 6 A |
| Thermal Resistance Junction‑case (RθJC) | 1.66 °C/W (TO‑220) / 4.17 °C/W (TO‑220FP) |
| Input Capacitance (Ciss) | 260 pF |
| Output Capacitance (Coss) | 68 pF |
| Reverse Recovery Time (trr) | 160 ns |
| Storage Temperature Range | -60 °C to 150 °C |
All STMicroelectronics STP6NB25 documents by type
User Manual 3
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the STP6NB25 MOSFET?
The maximum drain‑source voltage is 250 V.
What is the typical on‑resistance of these MOSFETs?
The typical on‑resistance is 0.9 mΩ.
What is the avalanche current rating of these MOSFETs?
Both devices are rated for a 6 A avalanche current.
From: STMicroelectronics STP6NB25/STP6NB25FP Power MOSFET Datasheet