STP3NK80Z-STF3NK80Z-STD3NK80Z-STD3NK80Z-1 is a N-channel 800V-3.8Ω-2.5A-TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH™ Power MOSFET produced by ST company.
The STP3NK80Z series comprises N‑channel 800 V Power MOSFETs available in TO‑220, TO‑220FP, DPAK and IPAK packages. The devices feature a Zener‑protected gate, very low gate charge, and high dv/dt capability, making them suitable for demanding switching applications.
Key specifications include a continuous drain current of 2.5 A at 25 °C, a pulsed current rating of 10 A, and a total power dissipation of 70 W. The MOSFETs incorporate built‑in back‑to‑back gate‑source Zener diodes for ESD and transient protection, and they offer an avalanche energy of 170 mJ.
| Drain‑source voltage (VDS) | 800 V |
|---|---|
| Pulsed drain current (ID,pulse) | 10 A |
| Gate‑source voltage (VGS) | +30 V |
| Avalanche energy (Eav) | 170 mJ |
The device is rated for a maximum drain‑source voltage of 800 V.
The MOSFET can absorb a single pulse avalanche energy of 170 mJ.