This document describes the features and characteristics of STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET. The product has extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
This document describes the STP3NK80Z, STF3NK80Z, STD3NK80Z, and STD3NK80Z-1 N-channel Super MESH Power MOSFETs. These devices feature an 800V drain-source voltage rating, a typical on-resistance of 3.8 mΩ, and are designed for high current, high-speed switching applications such as off-line power supplies, adapters, PFC, and lighting. The series includes built-in gate-source Zener diodes for protection against voltage transients and ESD.
| Package Types | TO-220, TO-220FP, DPAK, IPAK |
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They are ideal for high current, high speed switching, off-line power supplies, adapters, PFC, and lighting.
Yes, they feature built-in back-to-back Zener diodes to enhance ESD capability and absorb voltage transients.