Key facts
- Brand
- Samsung
- Model
- K4S643232C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K4S643232C CMOS SDRAM Datasheet
The K4S643232C is a 2 M‑bit (512 K × 32) synchronous CMOS SDRAM organized in four banks. It operates with a 3.3 V LVTTL interface and supports a range of burst lengths and CAS latencies for high‑performance memory applications.
The document provides detailed ordering information, pin configuration, absolute maximum ratings, DC and AC operating conditions, timing parameters, and package dimensions for the 86‑pin TSOP(II) package.
Samsung K4S643232C specifications
| Capacity | 2 M‑bit (512 K × 32) |
|---|---|
| Organization | 4 banks, 32‑bit wide |
| Supply Voltage (VDD) | 3.0 V – 3.6 V |
| Maximum Operating Frequency | 183 MHz (TC/L55 package) |
| Storage Temperature Range | -55 °C to +150 °C |
| Power Dissipation (max) | 1 W |
All Samsung K4S643232C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage does the K4S643232C require?
The device operates from a 3.0 V to 3.6 V supply.
What is the highest clock frequency supported by the K4S643232C?
Up to 183 MHz for the TC/L55 package version.
What is the recommended supply voltage range for the K4S643232C?
The device is typically powered at 3.0 V to 3.6 V, with an absolute maximum rating of –10 V to +46 V on any pin.
What is the highest clock frequency the K4S643232C can operate at?
The TC/L55 version can run up to 183 MHz, while other versions support lower maximum frequencies.