The K4S643232C is a 67,108,864-bit synchronous high-data-rate dynamic random-access memory organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high-performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
The K4S643232C is a 2 M‑bit (512 K × 32) synchronous CMOS SDRAM organized in four banks. It operates with a 3.3 V LVTTL interface and supports a range of burst lengths and CAS latencies for high‑performance memory applications.
The document provides detailed ordering information, pin configuration, absolute maximum ratings, DC and AC operating conditions, timing parameters, and package dimensions for the 86‑pin TSOP(II) package.
| Capacity | 2 M‑bit (512 K × 32) |
|---|---|
| Organization | 4 banks, 32‑bit wide |
| Supply Voltage (VDD) | 3.0 V – 3.6 V |
| Maximum Operating Frequency | 183 MHz (TC/L55 package) |
| Storage Temperature Range | -55 °C to +150 °C |
| Power Dissipation (max) | 1 W |
The device operates from a 3.0 V to 3.6 V supply.
Up to 183 MHz for the TC/L55 package version.