Key facts
- Brand
- Samsung
- Model
- K4S640832K
- Industry
- Industrial
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-04-01
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Samsung K4S640832K / K4S641632K Synchronous DRAM Data Sheet
The document provides detailed specifications for Samsung's K4S640832K and K4S641632K synchronous DRAM chips. It includes part numbers, package information, electrical characteristics, timing parameters, and absolute maximum ratings.
Key sections describe the functional block diagram, pin configuration, recommended operating conditions, and AC test parameters, enabling designers to integrate the memory devices into high‑performance systems. This manual is written in Chinese.
Samsung K4S640832K specifications
| Package | 54‑pin TSOP‑II |
|---|---|
| Supply Voltage (VDD) | 3.0 V – 3.6 V |
| CAS Latency | 2 – 3 |
| Refresh Period | 64 ms (4K cycles) |
| Input Logic High Voltage (V_IH) | 2.0 V – 3.0 V |
| Input Logic Low Voltage (V_IL) | -0.3 V – 0.8 V |
Source: Samsung K4S640832K / K4S641632K Synchronous DRAM Data Sheet
All Samsung K4S640832K documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage range is recommended for the K4S640832K/K4S641632K devices?
The recommended supply voltage (VDD, VDDQ) is 3.0 V to 3.6 V, with a typical value of 3.3 V.
From: Samsung K4S640832K / K4S641632K Synchronous DRAM Data Sheet
What is the refresh period for these SDRAM chips?
The devices use a 64 ms refresh period (4 K cycles).
From: Samsung K4S640832K / K4S641632K Synchronous DRAM Data Sheet
What is the recommended supply voltage range for the K4S640832K?
The recommended supply voltage is 3.0 V to 3.6 V with a typical value of 3.3 V.
What is the maximum operating frequency of the K4S640832K?
The part can operate up to 133 MHz (CL = 3) in the 8‑bit package.