This document describes the features and characteristics of the K4S643232C CMOS SDRAM product, including its storage capacity, operating voltage, operating frequency range, programmable latency, etc.
The K4S643232C is a 2 M × 32‑bit (512 K × 32 bit × 4 banks) synchronous CMOS SDRAM from Samsung. It operates with a 3.3 V supply, supports LVTTL interfaces, and offers programmable burst lengths and CAS latencies for high‑performance memory applications.
The datasheet provides ordering information, functional block diagrams, pin configurations, absolute maximum ratings, DC/AC operating conditions, timing parameters, and package dimensions for the 86‑pin TSOP (II) version of the device.
| Memory capacity | 2 M × 32 bits (512 K × 32 bit × 4 banks) |
|---|---|
| Supply voltage (typical) | 3.0 V – 3.6 V |
| Maximum operating frequency | 183 MHz (TC/L55 version) |
| Storage temperature range | -55 °C to +150 °C |
| Absolute maximum voltage on any pin | -10 V to +46 V |
The device is typically powered at 3.0 V to 3.6 V, with an absolute maximum rating of –10 V to +46 V on any pin.
The TC/L55 version can run up to 183 MHz, while other versions support lower maximum frequencies.
The part can be stored from –55 °C up to +150 °C.