Key facts
- Brand
- Samsung
- Model
- K9F2808U0C
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Samsung K9F2808U0C NAND Flash Memory Datasheet
The K9F2808U0C is a 128‑Mbit NAND flash memory (138,412,032 bits) organized as 32,768 pages of 528 bytes each, with an additional 4 Mbit spare area. It is offered in 2.7 V–3.6 V operation and features fast program (≈200 µs) and erase (≈2 ms) times, 100 k program/erase cycles endurance, and 10‑year data retention.
The datasheet details package options (48‑pin TSOP1 and WSOP1), pin functions, command sets, and power‑up protection. It also includes electrical characteristics such as Ready/Busy voltage levels and guidance for pull‑up resistor selection.
Samsung K9F2808U0C specifications
| Memory Capacity | 128 Mbit (plus 4 Mbit spare) |
|---|---|
| Operating Voltage | 2.7 V – 3.6 V |
| Typical Program Time | 200 µs |
| Typical Block Erase Time | 2 ms |
| Endurance | 100 k program/erase cycles |
| Data Retention | 10 years |
| Page Size | 528 bytes (512 + 16) |
| Block Size | 16 K + 512 bytes |
| Ready/Busy Voltage Levels | VIL 0.4 V, VOH 2.4 V |
All Samsung K9F2808U0C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the operating voltage range for the K9F2808U0C?
The device operates from 2.7 V to 3.6 V.
How many program/erase cycles can the K9F2808U0C endure?
It is rated for 100 k program/erase cycles.
What is the typical program time for the K9F2808U0C device?
The typical program time is 200 µs per page.
What voltage range does the 1.8 V version of the device support?
The 1.8 V version operates from 1.7 V to 1.95 V.