Datasheet
K4S641633H is a mobile memory chip produced by Samsung. It uses synchronous design to provide precise clock control and supports a wide range of operating frequencies, programmable burst lengths and programmable latencies. It can be used for various high bandwidth and high performance memory system applications.
User Manual
The K4S641633H is a synchronous high data rate dynamic random access memory (SDRAM) from Samsung that is organized as 4 x 1,048,576 words by 16 bits. The device is fabricated with Samsung's high-performance CMOS technology and features a synchronous design that allows precise cycle control with the use of system clock. The device also supports a wide range of operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for a variety of high-bandwidth and high-performance memory system applications. The K4S641633H is available in commercial temperature (-25°C to 70°C) and extended temperature (-25°C to 85°C) versions. The device is packaged in a 54-ball FBGA with 0.8mm ball pitch and is available in both leaded (-RXXX) and lead-free (-BXXX) versions.
User Manual
The document describes the features and characteristics of the K4S641633H-R(B)E/N/G/C/L/F model mobile SDRAM product, including 3.0V and 3.3V power supply, LVCMOS compatibility, four banks operation, MRS and EMRS cycle, etc.
