Key facts
- Brand
- Samsung
- Model
- K4S641633H
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-05
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SAMSUNG K4S641633H - R(B)E/N/G/C/L/F February 2004 Mobile-SDRAM handbook
K4S641633H is a mobile memory chip produced by Samsung. It uses synchronous design to provide precise clock control and supports a wide range of operating frequencies, programmable burst lengths and programmable latencies. It can be used for various high bandwidth and high performance memory system applications.
Read onlineSamsung K4S641633H specifications
| Memory organization | 1 M × 16 bit × 4 banks (67 Mbit) |
|---|---|
| Package type | 54‑ball FBGA, 0.8 mm pitch |
| Supply voltage (Vbb) | 2.7 V min / 3.0 V typ / 3.6 V max |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, Full page |
| Operating temperature (commercial) | -25 °C to 70 °C |
| Operating temperature (extended) | -25 °C to 85 °C |
| Refresh period | 64 ms (4K cycles) |
| Power dissipation | 1.0 W |
| Input capacitance (clock, address, etc.) | 2.0 pF – 4.0 pF |
All Samsung K4S641633H documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage range does the K4S641633H support?
The device operates from 2.7 V minimum to 3.6 V maximum, with a typical value of 3.0 V.
What are the operating temperature limits for the commercial and extended versions?
Commercial version: –25 °C to 70 °C; Extended version: –25 °C to 85 °C.
What voltage range does the K4S641633H support?
It supports 3.0 V and 3.3 V power supplies.
What is the maximum operating temperature for the extended version?
The extended version operates up to 85 °C.
