Samsung K4S64163LH Manuals

K4S64163LH - R(B)E/N/G/C/L/F February 2004 Mobile-SDRAM is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.

K4S64163LH-R(B)E/N/G/C/L/F is a mobile memory produced by Samsung. It uses high performance CMOS technology. It has 2.5V power supply, 4 banks operation, MRS cycle and EMRS cycle.