Samsung K9F1G08Q0M Manuals

ManualLib has 2 documents for the Samsung K9F1G08Q0M (Other Electronics): 1 service manual, 1 datasheet. Every file can be read online or downloaded as a PDF for free.

Service Manual 1Datasheet 1

Key facts

Brand
Samsung
Model
K9F1G08Q0M
Industry
Electronics
Documents
2
Languages
EN
Last added
2012-04-01

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Samsung K9F1G08Q0M 1Gb 1.8V NAND Flash Errata Manual

Samsung K9F1G08Q0M 1Gb 1.8V NAND Flash Errata Manual

Service Manual 38 pages · 725 KB · EN

The document reports an errata for Samsung's 1Gb 1.8 V NAND flash devices, identifying AC characteristic specifications that do not meet the original values. Affected products include part numbers such as K9F1G08Q0M‑YCB0/YIBO and K9F1G16Q0M‑YCB0/YIBO, with an improvement schedule targeting work‑week 25.

It provides revised timing tables, pin descriptions, package dimensions, and protection guidelines. The errata also details the Ready/Busy pin behavior, power‑up sequence, and recommended recovery time before issuing commands after power transitions.

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Samsung K9F1G08Q0M specifications

Voltage Supply (1.8 V device)1.70 V ~ 1.95 V
Endurance100 K program/erase cycles
Data Retention10 years
Program Time (typical)300 µs
Block Erase Time (typical)2 ms
Page Size(2 K + 64) Bytes

Source: Samsung K9F1G08Q0M 1Gb 1.8V NAND Flash Errata Manual

All Samsung K9F1G08Q0M documents by type

Service Manual 1

Disassembly, diagnostics and part numbers, for repair.

Datasheet 1

Ratings, dimensions and ordering codes, for selection and design work.

Questions answered in these manuals

What recovery time is required before issuing commands after power‑up?

A minimum recovery time of 10 µs is required before the internal circuit is ready for any command sequences.

From: Samsung K9F1G08Q0M 1Gb 1.8V NAND Flash Errata Manual

What is the allowed voltage range for the 1.8 V NAND flash device?

The device operates between 1.70 V and 1.95 V.

From: Samsung K9F1G08Q0M 1Gb 1.8V NAND Flash Errata Manual

What is the minimum recovery time required before command sequences after power‑up?

A recovery time of at least 10 µs is required before the internal circuit is ready for any command sequences.

From: Samsung K9F1G08Q0M / K9F1G16Q0M / K9F1G08D0M / K9F1G16D0M / K9F1G08U0M / K9F1G16U0M Datasheet

What are the typical program and block erase times?

Typical program time is 300 µs and typical block erase time is 2 ms.

From: Samsung K9F1G08Q0M / K9F1G16Q0M / K9F1G08D0M / K9F1G16D0M / K9F1G08U0M / K9F1G16U0M Datasheet