K4S64163LH-R(B)E/N/G/C/L/F is a mobile memory produced by Samsung. It uses high performance CMOS technology. It has 2.5V power supply, 4 banks operation, MRS cycle and EMRS cycle.
The Samsung K4S64163LH is a 1M × 16‑bit mobile SDRAM offered in a 54‑ball FBGA package. It supports a 2.5 V supply, LVCMOS‑compatible multiplexed address, and offers multiple CAS latency and burst length options for high‑performance memory applications.
The document provides detailed electrical characteristics, absolute maximum ratings, timing parameters for both DC and AC operation, and describes special functions such as Partial Array Self‑Refresh (PASR) and internal Temperature‑Compensated Self‑Refresh (TCSR).
| Supply voltage (Vop) | 2.3 V – 2.7 V (typical 2.5 V) |
|---|---|
| Maximum operating frequency | 133 MHz (CL = 3) |
| Package type | 54‑ball FBGA, 0.8 mm pitch |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, Full page |
| Commercial temperature range | -25 °C – 70 °C |
| Extended temperature range | -25 °C – 85 °C |
| Power dissipation | 1.0 W |
| Absolute maximum pin voltage | -1.0 V – 3.6 V |
The device operates with a supply voltage (Vop) between 2.3 V and 2.7 V, typically 2.5 V.
It supports a commercial range of –25 °C to 70 °C and an extended range of –25 °C to 85 °C.
The chip is supplied in a 54‑ball FBGA package with a 0.8 mm ball pitch.
The SDRAM supports CAS latency values of 1, 2, or 3.