K4S64163LH - R(B)E/N/G/C/L/F February 2004 Mobile-SDRAM is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications.
The handbook describes the Samsung K4S64163LH Mobile SDRAM, a 1M × 16‑bit, four‑bank memory device packaged in a 54‑ball FBGA. It lists key features such as 2.5 V supply, LVCMOS‑compatible multiplexed address, various CAS latencies and burst lengths, and special functions like PASR and internal temperature‑compensated self‑refresh.
Detailed sections cover ordering information, package dimensions, absolute maximum ratings, DC and AC operating conditions, timing parameters, power‑up sequence, and burst operation. The document also includes electrical characteristics, pin assignments, and self‑refresh options for different temperature ranges.
| Memory organization | 1M × 16‑bit, 4 banks |
|---|---|
| Supply voltage (Vop) | 2.3 V min / 2.5 V typ / 2.7 V max |
| Maximum operating frequency | 133 MHz (CL=3) |
| Package type | 54‑ball FBGA, 0.8 mm ball pitch |
| Temperature range | Commercial: -25 °C to 70 °C; Extended: -25 °C to 85 °C |
| Refresh period | 64 ms (4K cycle) |
| Maximum power dissipation | 1.0 W |
The recommended Vop is 2.3 V minimum, 2.5 V typical, and 2.7 V maximum.
It operates from –25 °C to 70 °C in commercial temperature mode and –25 °C to 85 °C in extended temperature mode.
The SDRAM contains four banks.
The device uses a 64 ms refresh period (4K cycle).