The K4S641633H is a synchronous high data rate dynamic random access memory (SDRAM) from Samsung that is organized as 4 x 1,048,576 words by 16 bits. The device is fabricated with Samsung's high-performance CMOS technology and features a synchronous design that allows precise cycle control with the use of system clock. The device also supports a wide range of operating frequencies, programmable burst lengths, and programmable latencies, making it suitable for a variety of high-bandwidth and high-performance memory system applications. The K4S641633H is available in commercial temperature (-25°C to 70°C) and extended temperature (-25°C to 85°C) versions. The device is packaged in a 54-ball FBGA with 0.8mm ball pitch and is available in both leaded (-RXXX) and lead-free (-BXXX) versions.
The K4S641633H is a 1 M × 16 bit mobile SDRAM organized in four banks, offering 67 Mbit of high‑performance memory. It supports 3.0 V and 3.3 V supplies, LVCMOS‑compatible multiplexed addresses, and a range of CAS latencies and burst lengths.
The document provides full electrical characteristics, package dimensions, pin configuration, and recommended operating conditions for both commercial and extended temperature ranges, as well as power‑up sequencing and self‑refresh features.
| Memory organization | 1 M × 16 bit × 4 banks (67 Mbit) |
|---|---|
| Package type | 54‑ball FBGA, 0.8 mm pitch |
| Supply voltage (Vbb) | 2.7 V min / 3.0 V typ / 3.6 V max |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, Full page |
| Operating temperature (commercial) | -25 °C to 70 °C |
| Operating temperature (extended) | -25 °C to 85 °C |
| Refresh period | 64 ms (4K cycles) |
| Power dissipation | 1.0 W |
| Input capacitance (clock, address, etc.) | 2.0 pF – 4.0 pF |
The device operates from 2.7 V minimum to 3.6 V maximum, with a typical value of 3.0 V.
Commercial version: –25 °C to 70 °C; Extended version: –25 °C to 85 °C.
It is supplied in a 54‑ball FBGA package with a 0.8 mm ball pitch.