Samsung K4S641633H Mobile SDRAM Datasheet

The document describes the features and characteristics of the K4S641633H-R(B)E/N/G/C/L/F model mobile SDRAM product, including 3.0V and 3.3V power supply, LVCMOS compatibility, four banks operation, MRS and EMRS cycle, etc.


Samsung K4S641633H Mobile SDRAM Datasheet - cover page
Brand
Samsung
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
127 KB
Published
01 April, 2012
Updated
29 September, 2023
MD5 checksum
0AA7332544016FE99013C663226172FF

About this manual

The K4S641633H is a 1M × 16‑bit mobile SDRAM offered in a 54‑ball FBGA package. It supports 3.0 V and 3.3 V power supplies, LVCMOS‑compatible multiplexed address, and multiple burst lengths and latencies.

The document provides absolute maximum ratings, recommended DC and AC operating conditions, timing parameters, package dimensions, and power‑up and burst sequences for both commercial and extended temperature ranges.

What's inside

  • Features
  • General Description
  • Package Dimension and Pin Configuration
  • Absolute Maximum Ratings
  • DC Operating Conditions
  • DC Characteristics
  • AC Operating Test Conditions
  • Operating AC Parameters
  • Partial Array Self Refresh
  • Power Up Sequence

Specifications

Power supply voltage3.0 V & 3.3 V
Package type54‑ball FBGA, 0.8 mm ball pitch
Maximum operating frequency133 MHz (CL = 3)
Extended temperature range-25 °C ~ 85 °C
Storage temperature range-55 °C ~ +150 °C

Frequently asked questions

What voltage range does the K4S641633H support?

It supports 3.0 V and 3.3 V power supplies.

What is the maximum operating temperature for the extended version?

The extended version operates up to 85 °C.

What package does the K4S641633H use?

It uses a 54‑ball FBGA package with a 0.8 mm ball pitch.

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