K4S640832K is a 64Mb synchronous dynamic random access memory (SDRAM) produced by Samsung. The chip is packaged in a K-die and supports x1, x4, x8, and x16 clock speeds.
The document provides detailed specifications for Samsung's K4S640832K and K4S641632K synchronous DRAM chips. It includes part numbers, package information, electrical characteristics, timing parameters, and absolute maximum ratings.
Key sections describe the functional block diagram, pin configuration, recommended operating conditions, and AC test parameters, enabling designers to integrate the memory devices into high‑performance systems. This manual is written in Chinese.
| Package | 54‑pin TSOP‑II |
|---|---|
| Supply Voltage (VDD) | 3.0 V – 3.6 V |
| CAS Latency | 2 – 3 |
| Refresh Period | 64 ms (4K cycles) |
| Input Logic High Voltage (V_IH) | 2.0 V – 3.0 V |
| Input Logic Low Voltage (V_IL) | -0.3 V – 0.8 V |
The recommended supply voltage (VDD, VDDQ) is 3.0 V to 3.6 V, with a typical value of 3.3 V.
The devices use a 64 ms refresh period (4 K cycles).
Both parts are supplied in a 54‑pin TSOP‑II package.