This document describes the features and characteristics of FQT5N20 QFET TM FQT5N20 200V N-Channel MOSFET, including low on-state resistance, fast switching, and high energy pulse withstand capability.
The FQT5N20 is a 200 V N‑Channel enhancement‑mode power MOSFET built with Fairchild's planar stripe DMOS technology. It offers low gate charge (typical 6 nC), low on‑resistance and fast switching suitable for DC‑DC converters, SMPS, motor control and UPS applications.
The document provides absolute maximum ratings, detailed electrical parameters, typical characteristic curves, test circuit diagrams, and mechanical package dimensions for the SOT‑223 package.
| Drain‑Source Voltage (V_DSS) | 200 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 1.0 A |
| Pulsed Drain Current (I_DM) | 4.0 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 25 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 50 °C/W |
| Total Gate Charge (Q_G) | 6.0 nC |
| Reverse Transfer Capacitance (C_rss) | 6‑8 pF |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 1.0 A continuously at a junction temperature of 25 °C.
The MOSFET is supplied in an SOT‑223 surface‑mount package.
The typical total gate charge is 6.0 nC.