Key facts
- Brand
- Fairchild
- Model
- FQPF3P50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF3P50 500V P-Channel MOSFET Datasheet
The FQPF3P50 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for electronic lamp ballast and complementary half‑bridge applications.
Key electrical characteristics include a -500 V drain‑source rating, 1.9 A continuous drain current at 25 °C, 7.6 A pulsed current, low gate charge (typical 18 nC), and low capacitances. The device is supplied in a TO‑220F package with thermal resistance values of 3.2 °C/W (junction‑to‑case) and 62.5 °C/W (junction‑to‑ambient).
Fairchild FQPF3P50 specifications
| Drain‑Source Voltage (V_DSS) | -500 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 1.9 A |
| Pulsed Drain Current (I_DM) | 7.6 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Total Gate Charge (Q_g) | 18 nC (typical) |
| Power Dissipation (P_D) at 25 °C | 39 W |
| Package | TO‑220F |
All Fairchild FQPF3P50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage rating of the FQPF3P50?
The device is rated for a maximum drain‑source voltage of -500 V.
What is the typical gate charge of this MOSFET?
The typical gate charge is 18 nC.
What is the maximum drain‑source voltage rating of the FQPF3P50?
The device is rated for a maximum drain‑source voltage of -500 V.
What is the typical gate charge of the FQPF3P50?
The typical total gate charge is about 18 nC.