FQPF3P50 is a P-channel enhancement mode power field effect transistor manufactured by Fairchild using their proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
The FQPF3P50 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for electronic lamp ballast and complementary half‑bridge applications.
Key electrical characteristics include a -500 V drain‑source rating, 1.9 A continuous drain current at 25 °C, 7.6 A pulsed current, low gate charge (typical 18 nC), and low capacitances. The device is supplied in a TO‑220F package with thermal resistance values of 3.2 °C/W (junction‑to‑case) and 62.5 °C/W (junction‑to‑ambient).
| Drain‑Source Voltage (V_DSS) | -500 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 1.9 A |
| Pulsed Drain Current (I_DM) | 7.6 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Total Gate Charge (Q_g) | 18 nC (typical) |
| Power Dissipation (P_D) at 25 °C | 39 W |
| Package | TO‑220F |
The device is rated for a maximum drain‑source voltage of -500 V.
The typical gate charge is 18 nC.
It is supplied in a TO‑220F package.
The continuous drain current is 1.9 A at 25 °C.