Key facts
- Brand
- Fairchild
- Model
- FQPF3N40
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF3N40 Datasheet
The FQPF3N40 is a 400 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance, fast switching, and high avalanche capability. It is intended for high‑efficiency switch‑mode power supplies and half‑bridge lamp ballast applications.
The datasheet details absolute maximum ratings, typical electrical characteristics, thermal parameters, and test circuit waveforms. Package information for the TO‑220F case and trademark notices are also included.
Fairchild FQPF3N40 specifications
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 1.6 A |
| Pulsed Drain Current (ID,pulse) | 64 A |
| Gate Charge (Qg) | 6.0 nC |
Source: Fairchild FQPF3N40 Datasheet
All Fairchild FQPF3N40 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQPF3N40?
The device is rated for a maximum drain‑source voltage of 400 V.
What continuous drain current can the FQPF3N40 handle at 25 °C?
It can conduct a continuous drain current of 1.6 A at 25 °C.
What is the maximum continuous drain current at 25 °C?
The device can conduct a continuous drain current of 1.6 A at 25 °C.
What is the single‑pulse avalanche energy rating?
The FQPF3N40 is rated for a single‑pulse avalanche energy of 120 mJ.