Key facts
- Brand
- Fairchild
- Model
- FQPF3N90
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF3N90 N-Channel MOSFET Datasheet
The FQPF3N90 is a 900 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑resistance, low gate charge, fast switching, and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, test circuit diagrams, and mechanical package dimensions (TO‑220F). It also includes trademark, disclaimer, life‑support policy, and product status information.
Fairchild FQPF3N90 specifications
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 24 A |
| Pulsed Drain Current (ID) (max) | 8.4 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 4.25 mΩ |
| Input Capacitance (Ciss) | 700 pF |
| Output Capacitance (Coss) | 85 pF |
| Reverse Transfer Capacitance (Crss) | 8.0 pF |
| Power Dissipation (PD) @ 25 °C | 43 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 29 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
All Fairchild FQPF3N90 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF3N90?
The device is rated for a maximum drain‑source voltage of 900 V.
What is the typical gate charge of the FQPF3N90?
The typical gate charge is 20 nC.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 900 V.
What is the typical gate charge of the FQPF3N90?
The typical gate charge is 20 nC.