FQPF3P50 is a 500V P-channel MOSFET produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, high switching performance, and high energy pulse withstand capabilities.
The FQPF3P50 is a P‑Channel enhancement mode power MOSFET fabricated with Fairchild's planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for electronic lamp ballast applications and complementary half‑bridge circuits.
Key electrical specifications include a -500 V drain‑source breakdown voltage, -1.9 A continuous drain current at 25 °C, and a pulsed current rating of -7.6 A. The device features a typical gate charge of 18 nC, low reverse transfer capacitance of 9.5 pF, and a power dissipation rating of 39 W in a TO‑220F package. Thermal resistance values are 3.2 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient).
| Drain-Source Voltage (V_DSS) | -500 V |
|---|---|
| Continuous Drain Current (I_D) | -1.9 A |
| Pulsed Drain Current (I_DM) | -7.6 A |
| Gate-Source Voltage (V_GS) | +30 V |
| Total Gate Charge (Qg) | 18 nC |
| Reverse Transfer Capacitance (C_rss) | 9.5 pF |
| Power Dissipation (P_D) | 39 W |
The device is rated for a maximum drain‑source voltage of -500 V.
The typical total gate charge is about 18 nC.
It is supplied in a TO‑220F package.
Yes, the device is 100 % avalanche tested.