FQPF3N90 is a 900V N-Channel MOSFET produced by Fairchild Semiconductor International. It features low on-state resistance, superior switching performance and high energy pulse endurance, making it ideal for high-efficiency switch-mode power supplies.
The FQPF3N90 is a 900 V N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑resistance, low gate charge, fast switching, and 100 % avalanche testing, making it suitable for high‑efficiency switch‑mode power supplies.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, test circuit diagrams, and mechanical package dimensions (TO‑220F). It also includes trademark, disclaimer, life‑support policy, and product status information.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 24 A |
| Pulsed Drain Current (ID) (max) | 8.4 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 4.25 mΩ |
| Input Capacitance (Ciss) | 700 pF |
| Output Capacitance (Coss) | 85 pF |
| Reverse Transfer Capacitance (Crss) | 8.0 pF |
| Power Dissipation (PD) @ 25 °C | 43 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 29 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of 900 V.
The typical gate charge is 20 nC.
It is supplied in a TO‑220F package.
Yes, it is 100 % avalanche tested.