FQPF3N90 N-Channel MOSFET is a power field effect transistor produced by Fairchild company. Its features are low on-state resistance, superior switching performance, high energy pulse, high efficiency switch mode power supply.
The FQPF3N90 is a 900 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, offering low on‑state resistance, fast switching, and robust avalanche performance.
Key specifications include a continuous drain current of 24 A at 25 °C, a pulsed drain current of 8.4 A, a gate‑source voltage rating of ±30 V, and a typical gate charge of 20 nC. The device is supplied in a TO‑220F package and features low input and output capacitances for high‑speed operation.
| Drain‑Source Voltage (V_DSS) | 900 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 24 A |
| Continuous Drain Current (I_D) @ 100 °C | 1.33 A |
| Pulsed Drain Current (I_D) (Note 1) | 8.4 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) @ V_GS=10 V, I_D=1 A | 4.25 mΩ |
| Typical Gate Charge (Q_g) | 20 nC |
| Package Type | TO‑220F |
The device is rated for a maximum drain‑source voltage of 900 V.
The typical gate charge is 20 nC.
The on‑resistance is 4.25 mΩ at a gate voltage of 10 V.
It is supplied in a TO‑220F package.