This document introduces QFET products of Dinghao Electronics. It mainly introduces the technical information of QFET, including product functions, technical features, application fields, etc.
The FQPF3N40 is a 400 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology, offering low on‑state resistance, fast switching, and high avalanche capability. It is intended for high‑efficiency switch‑mode power supplies and half‑bridge lamp ballast applications.
The datasheet details absolute maximum ratings, typical electrical characteristics, thermal parameters, and test circuit waveforms. Package information for the TO‑220F case and trademark notices are also included.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) @ 25°C | 1.6 A |
| Pulsed Drain Current (ID,pulse) | 64 A |
| Gate Charge (Qg) | 6.0 nC |
The device is rated for a maximum drain‑source voltage of 400 V.
It can conduct a continuous drain current of 1.6 A at 25 °C.
The MOSFET is supplied in a TO‑220F package.