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The FQPF3N40 is a 400 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies and electronic lamp ballast applications, offering low on‑state resistance and fast switching performance.
Key specifications include a continuous drain current of 1.6 A at 25 °C, a pulsed drain current rating of 64 A, a typical gate charge of 6 nC, and an input capacitance of 180‑230 pF. The device is supplied in a TO‑220F package and is rated for 120 mJ single‑pulse avalanche energy.
| Drain‑Source Voltage (VDS) | 400 V |
|---|---|
| Continuous Drain Current (ID) @25 °C | 1.6 A |
| Pulsed Drain Current (ID, pulsed) | 64 A |
| Gate Charge (Qg, typical) | 6.0 nC |
| On‑Resistance (RDS(on), typical @VGS=10 V) | 3.42 mΩ |
| Package | TO‑220F |
The device can conduct a continuous drain current of 1.6 A at 25 °C.
The FQPF3N40 is rated for a single‑pulse avalanche energy of 120 mJ.
It is supplied in a TO‑220F package.