FQPF3N25 is an N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for high efficiency switching DC/DC converters and switch mode power supplies.
The FQPF3N25 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology, optimized for low on‑state resistance and fast switching. It is intended for high‑efficiency DC/DC converters and switch‑mode power supplies.
Key specifications include a 250 V drain‑source rating, 23 A continuous drain current at 25 °C, low gate charge of 4 nC, and a typical on‑resistance of 2.22 Ω at VGS = 10 V. Thermal resistance is 0.463 °C/W (junction‑to‑case) and the device can dissipate up to 27 W. Package type is TO‑220F.
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 23 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 2.22 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 4.0 nC |
| Power Dissipation (PD) | 27 W @ 25 °C |
The device is rated for a maximum drain‑source voltage of 250 V.
The typical gate charge is 4.0 nC.
It can handle up to 23 A continuous drain current at 25 °C.
The on‑resistance is typically 2.22 Ω at a gate voltage of 10 V.