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The FQPF1N50 is a 500 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, power‑factor correction, and electronic lamp ballast applications.
Key specifications include a continuous drain current of 0.9 A at 25 °C, a pulsed drain current rating of 3.6 A, a gate‑source voltage rating of ±30 V, and a power dissipation of 16 W. The device is supplied in a TO‑220F package with thermal resistance values of 7.81 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). Detailed electrical, switching, and diode characteristics are provided along with test circuit diagrams.
| Drain-Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25°C | 0.9 A |
| Pulsed Drain Current (I_D) (Note 1) | 3.6 A |
| Gate-Source Voltage (V_GS) | ±30 V |
| Power Dissipation (P_D) @ 25°C | 16 W |
| Junction-to-Case Thermal Resistance (RθJC) | 7.81 °C·W |
| Junction-to-Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Typical Gate Charge (Q_g) | 4.0 nC |
The maximum drain‑source voltage is 500 V.
The continuous drain current at 25 °C is 0.9 A.
The FQPF1N50 is supplied in a TO‑220F package.
The typical gate charge is 4.0 nC.