This document introduces QFET products supplied by Dinghao Electronics, including QFET overview, product features, application areas, etc.
The FQPF1N50 is a 500 V N‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switch‑mode power supplies, power‑factor correction, and electronic lamp ballast applications.
The datasheet lists key parameters such as a continuous drain current of 0.9 A (25 °C), pulsed current of 3.6 A, typical on‑resistance of 9 mΩ at VGS = 10 V, and a total gate charge of about 4 nC. Thermal characteristics, test circuit waveforms, and TO‑220F package dimensions are also provided.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 0.9 A |
| Pulsed Drain Current (ID) (Note 1) | 3.6 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) typical | 9.0 mΩ @ VGS = 10 V |
| Total Gate Charge (Qg) typical | 4.0 nC |
| Power Dissipation (PD) at 25 °C | 16 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 7.81 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
The device is rated for a maximum drain‑source voltage of 500 V.
Typical on‑resistance is about 9 mΩ when the gate voltage is 10 V.
It can conduct up to 0.9 A continuously at 25 °C.
The typical total gate charge is approximately 4 nC.