Key facts
- Brand
- Toshiba
- Model
- TLP261J
- Industry
- Industrial
- Documents
- 2
- Languages
- EN · ZH
- Last added
- 2012-04-01
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Toshiba TLP261J Photocoupler Datasheet
The TLP261J is a miniature GaAs infrared‑emitting diode (IRED) coupled with a photo‑triac, designed for surface‑mount assembly. It offers a peak off‑state voltage of 600 V, isolation voltage of 3000 Vrms, and a zero‑crossing function, meeting UL1577 and EN60747‑5‑2 standards.
The document lists maximum ratings, recommended operating conditions, and detailed electrical characteristics such as forward current, peak on‑state current, and temperature ranges. It also includes mechanical ratings, pin configuration, and restrictions on product use.
Toshiba TLP261J specifications
| Peak off‑state voltage | 600 V (min) |
|---|---|
| Isolation voltage | 3000 Vrms (min) |
| Forward current (IF) | 50 mA |
| Operating temperature range | -40 °C to 100 °C |
| Storage temperature range | -55 °C to 125 °C |
| Weight | 0.09 g |
| Creepage distance | 4.0 mm (min) |
| Clearance | 4.0 mm (min) |
All Toshiba TLP261J documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the peak off‑state voltage of the TLP261J?
The peak off‑state voltage is 600 V (minimum).
What are the recommended operating temperature limits?
The device is rated for operation from –40 °C up to 100 °C.
What is the maximum off‑state voltage rating of the TLP261J?
The device is rated for a peak off‑state voltage of 600 V.
Is the TLP261J UL‑1577 certified?
Yes, the TLP261J is UL‑recognized under UL 1577.