Key facts
- Brand
- Toshiba
- Model
- RN1604
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-09
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TOSHIBA RN1601/1602/1603/1604/1605/1606 Manual(1)
The RN1601‑RN1606 series are silicon N‑PN epitaxial transistors designed for switching and inverter circuits. The devices include built‑in bias resistors, simplify circuit design and reduce part count. They are complementary to the RN2601‑RN2606 series and are offered in a Super Mini (SM6) package with six leads.
The datasheet provides detailed electrical characteristics such as collector‑base and collector‑emitter voltages, current ratings, power dissipation, gain values and temperature limits. Maximum ratings are listed for a junction temperature of 150 °C and storage range from –55 °C to 150 °C. Type names and marking codes for each part number are also included.
Toshiba RN1604 specifications
| Collector‑Emitter Voltage (VCEO) | 50 V |
|---|---|
| Collector Current (IC) | 100 mA |
| Power Dissipation (Pc) | 300 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -55 °C to 150 °C |
| DC Current Gain (hFE) RN1601 | 30 |
All Toshiba RN1604 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage for the RN1601‑RN1606 transistors?
The maximum collector‑emitter voltage is 50 V.
What are the storage temperature limits for these transistors?
They can be stored from –55 °C up to 150 °C.
What is the maximum collector current for the RN1601‑RN1606 transistors?
The maximum collector current is 100 mA.
What collector‑emitter voltage rating do these devices have?
They are rated for a collector‑emitter voltage of 50 V.