The RN1601‑RN1606 series are silicon N‑PN epitaxial transistors designed for switching and inverter circuits. The devices include built‑in bias resistors, simplify circuit design and reduce part count. They are complementary to the RN2601‑RN2606 series and are offered in a Super Mini (SM6) package with six leads.
The datasheet provides detailed electrical characteristics such as collector‑base and collector‑emitter voltages, current ratings, power dissipation, gain values and temperature limits. Maximum ratings are listed for a junction temperature of 150 °C and storage range from –55 °C to 150 °C. Type names and marking codes for each part number are also included.
| Collector‑Emitter Voltage (VCEO) | 50 V |
|---|---|
| Collector Current (IC) | 100 mA |
| Power Dissipation (Pc) | 300 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range (Tstg) | -55 °C to 150 °C |
| DC Current Gain (hFE) RN1601 | 30 |
The maximum collector‑emitter voltage is 50 V.
They can be stored from –55 °C up to 150 °C.
The devices are rated for a collector current of 100 mA.
RN1601 has a DC current gain of 30.